Impact of electrical testing strategies on the performance metrics of bio-organic-based resistive switching memory
摘要
Resistive Random-Access Memory (ReRAM) is considered as one of the most promising non-volatile memory technologies because of its high scalability, fast switching speed, and low power consumption. While many review papers are focused on investigating material types, material properties, device fabrication methods, and device structures, the influence of electrical testing strategies on ReRAM performance has yet been reviewed, particularly for bio-organic-based ReRAM. This review compiled, analyzed, and discussed how compliance current, voltage sweep rate, voltage sweep range, and voltage sweeping direction affect the ON/OFF ratio, read memory window, and both SET and RESET voltages of ReRAM.
Graphical abstract