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Photoluminescence mapping of laser-damaged β-Ga2O3

  • 期刊论文

  • 发表日期：

    2024年5月13日

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  • Jesse Huso,
  • Matthew D. McCluskey,
  • John S. McCloy,
  • Arkka Bhattacharyya,
  • Sriram Krishnamoorthy,
  • Clint D. Frye,
  • Joel B. Varley,
  • Lars F. Voss

摘要

Photoluminescence (PL) mapping was utilized to investigate damage in β-Ga2O3 epilayers induced by 1064 nm laser pulses. The intensity and position of the intrinsic UV band were determined and plotted as a false-color image. Two types of damage were identified: circular damage and damage cracks. Circular damage shows lower UV PL intensity than the surrounding material with color centers in a “halo” around the damaged region. Damage cracks are aligned with the a and c axes and show higher PL intensity than undamaged material. Defects in the as-grown material were revealed by shifts in the UV band energy.

Graphical abstract