<p>This study investigates crystallographic texture and in-plane electrical resistivity anisotropy in pure zirconium (Zr) sheets. Resistivity was measured precisely at 77&#xa0;K and 300&#xa0;K by the direct current (DC) four-point method along 0°, 30°, 45°, and 90° in-plane directions. Despite a statistically isotropic in-plane texture observed via electron backscatter diffraction (EBSD), the initial state exhibited a distinct dumbbell-shaped anisotropy in resistivity, attributed to manufacturing-induced internal strains remaining after annealing. During plastic deformation, the resistivity ratio decreased across all orientations, which could be attributed to strain-induced modifications to the electronic structure—such as potential changes in Fermi surface topology—which interact with defect scattering. At 5–8% strain, the ratios converged, suggesting the initial processing history is overwritten by a dominant, more isotropic lattice defect distribution. Matthiessen’s plot parameters (<i>α</i> and <i>β</i>) revealed low linearity (<i>r</i>² = 0.7186), indicating that the electronic structure undergoes continuous transitions throughout deformation.</p> Graphical abstract <p></p>