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<p>HfO<sub>2</sub>–ZrO<sub>2</sub>-based materials have emerged as potential candidates for non-volatile memories due to scalability and excellent compatibility with complementary metal oxide (CMOS) devices. In this manuscript, we report a detailed investigation into the phase evolution in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) thin films grown by pulsed laser deposition on single-crystal c-Al<sub>2</sub>O<sub>3</sub> substrates. Structural characterization confirmed stabilization of monoclinic (m-HZO) and orthorhombic (o-HZO) phases on epitaxial Al:ZnO-buffered c-Al<sub>2</sub>O<sub>3</sub>. The phase evolution was also thickness dependent with HZO monoclinic phase stabilizing at 56&#xa0;nm, while the orthorhombic phase stabilized at lower thickness below 33&#xa0;nm. Reduced thickness increased oxygen vacancy levels, thereby stabilizing the orthorhombic phase. MIM devices based on m-HZO over an Al:ZnO bottom electrode exhibited forming-free resistive switching with endurance over 10<sup>4</sup> cycles and low-power operation, while o-HZO showed weak ferroelectric polarization, attributed to minor non-polar phases, yielding a 2P<sub>r</sub> of 1.6 μC/cm<sup>2</sup> and a coercive field (Ec) of 1.17 MV/cm.</p> Graphical abstract <p></p>

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Phase stability and oxygen vacancy modulations in polymorphic Hf0.5Zr0.5O2 thin films for memory applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月10日

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  • K. Gurukrishna,
  • Pranab Kumar Roy,
  • Aditya Uday Kamat,
  • Rishow Kumar,
  • Himanshu Yadav,
  • Harsh Nithinkumar Joshi,
  • Shubham Sahay,
  • Ashish Garg,
  • Shikhar Misra

摘要

HfO2–ZrO2-based materials have emerged as potential candidates for non-volatile memories due to scalability and excellent compatibility with complementary metal oxide (CMOS) devices. In this manuscript, we report a detailed investigation into the phase evolution in Hf0.5Zr0.5O2 (HZO) thin films grown by pulsed laser deposition on single-crystal c-Al2O3 substrates. Structural characterization confirmed stabilization of monoclinic (m-HZO) and orthorhombic (o-HZO) phases on epitaxial Al:ZnO-buffered c-Al2O3. The phase evolution was also thickness dependent with HZO monoclinic phase stabilizing at 56 nm, while the orthorhombic phase stabilized at lower thickness below 33 nm. Reduced thickness increased oxygen vacancy levels, thereby stabilizing the orthorhombic phase. MIM devices based on m-HZO over an Al:ZnO bottom electrode exhibited forming-free resistive switching with endurance over 104 cycles and low-power operation, while o-HZO showed weak ferroelectric polarization, attributed to minor non-polar phases, yielding a 2Pr of 1.6 μC/cm2 and a coercive field (Ec) of 1.17 MV/cm.

Graphical abstract