Insights into heterogeneous electrochemical performance of boron-doped carbon nanowall/diamond interfaces using Mott-Schottky analysis and scanning electrochemical microscopy
摘要
Interfacing graphene-like layers with diamond offers a versatile platform for carbon electronics, neuromorphic engineering, and bio-chemical sensing. This work reports the synthesis of B-doped diamond (BDD) films, followed by B-doped carbon nanowalls (BCNW) and graphene (Gr) forming interfacial BCNW/BDDl/h and Gr/BDDh structures. The microstructural features constituted complex morphology defined with BDD grains interposed with vertical BCNW and planar graphene overlayers. The electrochemical performance exhibited variable redox peak separation (ΔEp) and faster electron transfer rate (kET) toward inner [62–106 mV, 80–92 mV and 1.73 × 10−3–6.76 × 10−2 cm/s] and outer [60–68 mV, 64–66 mV and 1.54 × 10−3–2.12 × 10−2 cm/s] redox mediators, derived from analytical procedures and probe approach curves besides imaging electroactivity using scanning electrochemical microscopy. The Mott-Schottky relationship estimates flat band potential (EFB) and acceptor carrier concentration. The findings are discussed in terms of hydrogen-terminated B-doped carbons with partial surface oxygenation, electronic surface states, and sp2C/sp3C hybridized interface for mixed electron–ion transportation.
Graphical abstract