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<p>Perovskite solar cells, a promising third-generation photovoltaic technology, are gaining attention for their high efficiency and cost-effective fabrication. This study investigates a lead-free perovskite solar cells using Cs<sub>2</sub>BiAgI<sub>6</sub> as the absorber and tin sulfide as the hole transport layer. SnS is an earth-abundant, non-toxic semiconductor with excellent optoelectronic properties, making it a sustainable HTL alternative. The simulated device structure—FTO/ITO/TiO<sub>2</sub>/Cs<sub>2</sub>BiAgI<sub>6</sub>/SnS/Au—was analyzed using SCAPS-1D under AM 1.5G illumination. Key absorber properties such as thickness, doping, and defect density were varied to assess performance. Additionally, the impact of doping and thickness on HTL and ETL was studied. The optimized configuration enabled efficient charge transport: electrons moved to TiO<sub>2</sub>, and holes were effectively extracted by SnS. The device achieved a 0.94&#xa0;V open-circuit voltage, 22.52&#xa0;mA/cm<sup>2</sup> short-circuit current, 86.85% fill factor, and 18.37% power conversion efficiency at 300&#xa0;K.</p> Graphical abstract <p></p>

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Enhanced efficiency of perovskite solar cells utilizing Cs2BiAgI6 absorber with optimized charge transport layers using simulations

  • 期刊论文

  • 发表日期：

    2026年5月1日

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  • Nidhi Singh,
  • Anchal Srivastava,
  • Priyanka Srivastava,
  • Shobhit Shukla,
  • R. K. Shukla

摘要

Perovskite solar cells, a promising third-generation photovoltaic technology, are gaining attention for their high efficiency and cost-effective fabrication. This study investigates a lead-free perovskite solar cells using Cs2BiAgI6 as the absorber and tin sulfide as the hole transport layer. SnS is an earth-abundant, non-toxic semiconductor with excellent optoelectronic properties, making it a sustainable HTL alternative. The simulated device structure—FTO/ITO/TiO2/Cs2BiAgI6/SnS/Au—was analyzed using SCAPS-1D under AM 1.5G illumination. Key absorber properties such as thickness, doping, and defect density were varied to assess performance. Additionally, the impact of doping and thickness on HTL and ETL was studied. The optimized configuration enabled efficient charge transport: electrons moved to TiO2, and holes were effectively extracted by SnS. The device achieved a 0.94 V open-circuit voltage, 22.52 mA/cm2 short-circuit current, 86.85% fill factor, and 18.37% power conversion efficiency at 300 K.

Graphical abstract