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<p>In this study, the properties of a photodiode with an Au/PANI/p-Si/Al structure fabricated using polyaniline (PANI) material were investigated. The morphology of the thin film obtained by coating PANI on a glass surface was characterized by scanning (SEM) and transmission (TEM) electron microscopy techniques. Current–voltage (I-V) measurements of the diode under various light intensities were taken, and basic electrical and optical parameters were calculated from these data. As a result of the analyses, changes in the electrical parameters occurred as the illumination intensity was increased from 0 to 100 mW/cm<sup>2</sup> (in 20 mW/cm<sup>2</sup> increments). It was observed that the ideality factor (n) increased from 1.71 to 2.90. The barrier height (Φ<sub>b</sub>) value was determined to decrease from 0.76 to 0.53&#xa0;eV. These changes have been attributed to light-generated carriers filling trap states at the PANI/p-Si interface and modulating the interface potential. Parallel to the increasing light intensity, an increase in photocurrent (I<sub>ph</sub>) and photosensitivity (S) values occurred. On the other hand, a decrease in photoresponse (R) and detectivity (D<sup>*</sup>) values was detected.</p> Graphical abstract <p></p>

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Enhanced photodiode performance of Au/PANI/p-Si diode: Characterization and analysis

  • 期刊论文

  • 发表日期：

    2026年3月13日

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  • Ali Rıza Deniz,
  • Gökhan Gök

摘要

In this study, the properties of a photodiode with an Au/PANI/p-Si/Al structure fabricated using polyaniline (PANI) material were investigated. The morphology of the thin film obtained by coating PANI on a glass surface was characterized by scanning (SEM) and transmission (TEM) electron microscopy techniques. Current–voltage (I-V) measurements of the diode under various light intensities were taken, and basic electrical and optical parameters were calculated from these data. As a result of the analyses, changes in the electrical parameters occurred as the illumination intensity was increased from 0 to 100 mW/cm2 (in 20 mW/cm2 increments). It was observed that the ideality factor (n) increased from 1.71 to 2.90. The barrier height (Φb) value was determined to decrease from 0.76 to 0.53 eV. These changes have been attributed to light-generated carriers filling trap states at the PANI/p-Si interface and modulating the interface potential. Parallel to the increasing light intensity, an increase in photocurrent (Iph) and photosensitivity (S) values occurred. On the other hand, a decrease in photoresponse (R) and detectivity (D*) values was detected.

Graphical abstract