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<p>We report formation of ion tracks in amorphous and crystalline silicon by swift heavy ions of 100&#xa0;MeV Au ions. These tracks contained new allotropes of amorphous silicon, namely high-density (HD) Q-silicon and low-density (LD) <i>α</i>-Silicon, providing evidence for polyamorphism in amorphous silicon. These ion tracks exhibited room-temperature ferromagnetism with tremendous potential for integrating spintronics with microelectronics for novel quantum devices. Using HR STEM-Z (HAADF), we determined that the tracks contained HD Q-Si and LD <i>α</i>-Si in both amorphous and crystalline silicon. The tracks were wider in amorphous silicon compared to crystalline silicon. Thermal properties of silicon played a critical role in the formation and the size of tracks. We discuss a model based upon melting along the tracks and rapid quenching to explain the formation of Q-Si and <i>α</i>-Si based upon undercooling. The Q-Si with nanostructuring as rings and strings showed robust ferromagnetism with a Curie temperature over 500&#xa0;K.</p> Graphical abstract <p></p>

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Formation of Q-silicon by swift heavy ion irradiation: Nanoscale materials modifications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月3日

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  • Jagdish Narayan,
  • Siba Sundar Sahoo,
  • Naveen N. Joshi,
  • Ambuj Tripathi,
  • Roger J. Narayan

摘要

We report formation of ion tracks in amorphous and crystalline silicon by swift heavy ions of 100 MeV Au ions. These tracks contained new allotropes of amorphous silicon, namely high-density (HD) Q-silicon and low-density (LD) α-Silicon, providing evidence for polyamorphism in amorphous silicon. These ion tracks exhibited room-temperature ferromagnetism with tremendous potential for integrating spintronics with microelectronics for novel quantum devices. Using HR STEM-Z (HAADF), we determined that the tracks contained HD Q-Si and LD α-Si in both amorphous and crystalline silicon. The tracks were wider in amorphous silicon compared to crystalline silicon. Thermal properties of silicon played a critical role in the formation and the size of tracks. We discuss a model based upon melting along the tracks and rapid quenching to explain the formation of Q-Si and α-Si based upon undercooling. The Q-Si with nanostructuring as rings and strings showed robust ferromagnetism with a Curie temperature over 500 K.

Graphical abstract