Scholarlink

Abstract <p>Ga<sub><i>x</i></sub>In<sub>1-<i>x</i></sub>Sb (0 &lt; <i>x</i> &lt; 1) single crystals have broad application prospects due to their excellent physical properties. Ga<sub>0.9</sub>In<sub>0.1</sub>Sb crystals (Φ27 × 110&#xa0;mm) were prepared with the traveling heater method (THM) with a GaSb seed crystal. The effects of the melting zone height on the crystal structure and photoelectric properties of the GaInSb crystal were investigated. The ingot grown at the melting zone height of 35&#xa0;mm exhibited the best crystallization quality, and both the dislocation density and the radial segregation first decreased and then increased with the melting zone height increase, reaching the minimal values of 1.509 × 10<sup>3</sup>&#xa0;cm⁻<sup>2</sup> and 0.032&#xa0;mol%/mm, respectively. Similarly, the carrier concentration, the carrier mobility, and the infrared transmittance all initially increased and subsequently decreased, reaching the maximum values of 1.571 × 10<sup>18</sup> cm⁻<sup>3</sup>, 1714 cm<sup>2</sup>/(V·s), and 55%, respectively, at 35&#xa0;mm melting zone height. However, the minimal axial segregation (0.034&#xa0;mol%/mm) was obtained at 18&#xa0;mm.</p> Graphical abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effects of melting zone height on crystallization quality and photoelectric properties of GaInSb crystals grown with traveling heater method

  • 期刊论文

  • 发表日期：

    2025年12月24日

查看全文
  • Wenhao Yu,
  • Jian Liu,
  • Ming Liu,
  • Weirong Xing,
  • Lifang Nie,
  • Juncheng Liu

摘要

Abstract

GaxIn1-xSb (0 < x < 1) single crystals have broad application prospects due to their excellent physical properties. Ga0.9In0.1Sb crystals (Φ27 × 110 mm) were prepared with the traveling heater method (THM) with a GaSb seed crystal. The effects of the melting zone height on the crystal structure and photoelectric properties of the GaInSb crystal were investigated. The ingot grown at the melting zone height of 35 mm exhibited the best crystallization quality, and both the dislocation density and the radial segregation first decreased and then increased with the melting zone height increase, reaching the minimal values of 1.509 × 103 cm⁻2 and 0.032 mol%/mm, respectively. Similarly, the carrier concentration, the carrier mobility, and the infrared transmittance all initially increased and subsequently decreased, reaching the maximum values of 1.571 × 1018 cm⁻3, 1714 cm2/(V·s), and 55%, respectively, at 35 mm melting zone height. However, the minimal axial segregation (0.034 mol%/mm) was obtained at 18 mm.

Graphical abstract