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Abstract <p>In order to determine how material characteristics percolate up to system-level improvements in power dissipation for different wide-bandgap (WBG) and ultra-wide-bandgap (UWBG) material systems and device types, we have developed an optimization tool for power diodes. This tool minimizes power dissipation for a given operational regime for a variety of device types and materials including self-heating due to thermal transport. The tool has been modified to include the UWBG-specific effects of incomplete ionization and space charge limited conduction (SCLC). We have carried out optimizations for a wide range of system operating points to determine the regimes for which certain power diode materials/devices are favored. We present results comparing SiC merged PIN Schottky (MPS) diodes to PIN and Schottky barrier diodes (SBDs) made from diamond, <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\upbeta\)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">β</mi> </math></EquationSource> </InlineEquation>-Ga<sub>2</sub>O<sub>3</sub>, GaN, AlN, and Al<sub>0.85</sub>Ga<sub>0.15</sub>N. The results of this work show that AlN and diamond are preferred for high voltages and frequencies under most operating conditions.</p> Graphical abstract <p></p>

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Design optimization of ultra-wide-bandgap vertical power diodes with self-heating

  • 期刊论文

  • 发表日期：

    2025年12月10日

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  • J. Shoemaker,
  • A. Binder,
  • M. Negoita,
  • J. Flicker,
  • R. Kaplar,
  • S. Goodnick

摘要

Abstract

In order to determine how material characteristics percolate up to system-level improvements in power dissipation for different wide-bandgap (WBG) and ultra-wide-bandgap (UWBG) material systems and device types, we have developed an optimization tool for power diodes. This tool minimizes power dissipation for a given operational regime for a variety of device types and materials including self-heating due to thermal transport. The tool has been modified to include the UWBG-specific effects of incomplete ionization and space charge limited conduction (SCLC). We have carried out optimizations for a wide range of system operating points to determine the regimes for which certain power diode materials/devices are favored. We present results comparing SiC merged PIN Schottky (MPS) diodes to PIN and Schottky barrier diodes (SBDs) made from diamond, \(\upbeta\) β -Ga2O3, GaN, AlN, and Al0.85Ga0.15N. The results of this work show that AlN and diamond are preferred for high voltages and frequencies under most operating conditions.

Graphical abstract