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<p>Engineering active interfaces in 2D materials is vital for advancing supercapacitors. Here, Mo-doped ReS<sub>2</sub>&#xa0;was synthesized via a single-step hydrothermal method, enhancing electrochemical properties. Mo doping introduces unsaturated electrons and defect-rich sites, improving conductivity and charge transport in ReS<sub>2</sub>. Structural and compositional analyses (SEM, TEM–EDX, XRD, Raman, XPS) confirm successful Mo incorporation. Electrochemical testing in a three-electrode setup using 1&#xa0;M Na<sub>2</sub>SO<sub>4</sub>&#xa0;(1&#xa0;mg&#xa0;cm<sup>−2</sup>&#xa0;loading) showed that 10% Mo-ReS<sub>2</sub>&#xa0;delivered a specific capacitance of 163.7 F g<sup>−1</sup>&#xa0;at 0.5 A g<sup>−1</sup>, a 61% improvement over pure ReS<sub>2</sub>. It also achieved 22.6 Wh kg<sup>−1</sup>&#xa0;energy density, 250 W kg<sup>−1</sup>&#xa0;power density, and 206.3 F g<sup>−1</sup>&#xa0;at 5&#xa0;mV&#xa0;s<sup>−1</sup>&#xa0;from CV. Notably, it retained 91.75% of its capacitance after 5000 GCD cycles, demonstrating excellent stability. These results underscore the synergistic role of Mo doping and interface engineering, positioning Mo-ReS<sub>2</sub>&#xa0;as a promising material for energy storage applications.</p> Graphic abstract <p></p>

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Tailoring ReS2 interfaces via Mo doping to boost supercapacitor efficiency

  • 期刊论文

  • 发表日期：

    2025年11月24日

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  • Mohamed A. A. Eldaly,
  • Guoqing Guan,
  • Ahmed Abd El-Moneim,
  • Mohsen A. Hassan

摘要

Engineering active interfaces in 2D materials is vital for advancing supercapacitors. Here, Mo-doped ReS2 was synthesized via a single-step hydrothermal method, enhancing electrochemical properties. Mo doping introduces unsaturated electrons and defect-rich sites, improving conductivity and charge transport in ReS2. Structural and compositional analyses (SEM, TEM–EDX, XRD, Raman, XPS) confirm successful Mo incorporation. Electrochemical testing in a three-electrode setup using 1 M Na2SO4 (1 mg cm−2 loading) showed that 10% Mo-ReS2 delivered a specific capacitance of 163.7 F g−1 at 0.5 A g−1, a 61% improvement over pure ReS2. It also achieved 22.6 Wh kg−1 energy density, 250 W kg−1 power density, and 206.3 F g−1 at 5 mV s−1 from CV. Notably, it retained 91.75% of its capacitance after 5000 GCD cycles, demonstrating excellent stability. These results underscore the synergistic role of Mo doping and interface engineering, positioning Mo-ReS2 as a promising material for energy storage applications.

Graphic abstract