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<p>Chalcogenide perovskites, particularly BaZrS<sub>3</sub>, hold promise for optoelectronic devices owing to their exceptional light absorption and inherent stability. However, thin films obtained at lower processing temperatures typically result in small grain sizes and inferior transport properties. Here we introduce an approach employing co-sputtering elemental Ba and Zr targets followed by CS<sub>2</sub> sulfurization, with a judiciously applied NaF capping layer. NaF acts as a flux agent during sulfurization, leading to marked increase in grain size and improved crystallinity. This process results in near-stoichiometric films with enhanced photoresponse. Terahertz spectroscopy further reveals a carrier mobility more than two orders of magnitude higher than those obtained from field-effect transistor measurements, suggesting that bulk transport is limited by grain boundary scattering. Our results demonstrate flux-assisted sulfurization as an effective strategy to improve the crystallinity of chalcogenide perovskite thin films for optoelectronic applications.</p> Graphical abstract <p></p>

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Enhanced photoresponse in BaZrS3 thin films via sputtering and flux-assisted sulfurization

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月2日

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  • Haolei Hui,
  • Lauren Samson,
  • Arif Ullah,
  • Chenyu Wang,
  • Brandon Schoener,
  • Jung-Hun Seo,
  • John Cerne,
  • Andrea Markelz,
  • Yi-Yang Sun,
  • Shengbai Zhang,
  • Hao Zeng

摘要

Chalcogenide perovskites, particularly BaZrS3, hold promise for optoelectronic devices owing to their exceptional light absorption and inherent stability. However, thin films obtained at lower processing temperatures typically result in small grain sizes and inferior transport properties. Here we introduce an approach employing co-sputtering elemental Ba and Zr targets followed by CS2 sulfurization, with a judiciously applied NaF capping layer. NaF acts as a flux agent during sulfurization, leading to marked increase in grain size and improved crystallinity. This process results in near-stoichiometric films with enhanced photoresponse. Terahertz spectroscopy further reveals a carrier mobility more than two orders of magnitude higher than those obtained from field-effect transistor measurements, suggesting that bulk transport is limited by grain boundary scattering. Our results demonstrate flux-assisted sulfurization as an effective strategy to improve the crystallinity of chalcogenide perovskite thin films for optoelectronic applications.

Graphical abstract