Accelerated exploration of direct band gap transition metal dichalcogenide monolayers through machine learning-driven discovery
摘要
In the realm of semiconductor technology, the precise tuning of band gaps is crucial for the development of sophisticated devices. Monolayer transition metal dichalcogenides (TMDMs) are of particular interest due to their transition from indirect to direct band gap semiconductors, characterized by effective light absorption and enhanced charge transfer capabilities. This study utilizes machine learning to efficiently identify TMDMs with direct band gaps, employing an Artificial Neural Network that boasts an 88% accuracy rate. Complementary methods like XGBoost and Random Forest also demonstrate promising potential. Shapley Additive Explanations analysis uncovers key factors influencing the likelihood of a compound being a TMDM, including oxygen and sulfur content, the range of atomic numbers, the average number of s-valence electrons, and the presence of elements like Co, Zr, and Ti. This investigation not only accelerates the identification of single-layer TMDMs but shows potential for predicting novel materials, significantly advancing research in the field.
Graphical abstract