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<p>IGZO-based materials and devices are advancing in the realms of memory devices and gate drive circuitry fabrication, maintaining compatibility with the same display circuitry. We demonstrate that a device with a mask channel dimension of 0.5&#xa0;μm (length) and 3&#xa0;μm (width) exhibits superior current driving capability, transconductance, lowest negative bias stress instability, improved subthreshold swing, and optimal threshold voltage. Our high-performance device with a 0.5&#xa0;μm:3&#xa0;μm channel dimension is developed with the smallest possible channel length patterned by I-line lithography. This low-power device demonstrates a maximum on-current of 16.1. Previously reported novel hypothesis states that a lower concentration of applied hydrogen at the IGZO surface, compared to residual hydrogen, reduces the residual hydrogen in the deep IGZO layer, shifting the threshold voltage positively. Furthermore, this process and metallization enhances the carrier density and current transportation at the interface, significantly elevating the device’s on-current (0.1&#xa0;mA).</p> Graphical abstract <p></p>

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Impact of channel dimensions and hydrogen plasma treatment on short-channel IGZO TFTs

  • 期刊论文

  • 发表日期：

    2025年5月27日

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  • Dilshad Ahmad,
  • Jing Xu,
  • Jun Luo

摘要

IGZO-based materials and devices are advancing in the realms of memory devices and gate drive circuitry fabrication, maintaining compatibility with the same display circuitry. We demonstrate that a device with a mask channel dimension of 0.5 μm (length) and 3 μm (width) exhibits superior current driving capability, transconductance, lowest negative bias stress instability, improved subthreshold swing, and optimal threshold voltage. Our high-performance device with a 0.5 μm:3 μm channel dimension is developed with the smallest possible channel length patterned by I-line lithography. This low-power device demonstrates a maximum on-current of 16.1. Previously reported novel hypothesis states that a lower concentration of applied hydrogen at the IGZO surface, compared to residual hydrogen, reduces the residual hydrogen in the deep IGZO layer, shifting the threshold voltage positively. Furthermore, this process and metallization enhances the carrier density and current transportation at the interface, significantly elevating the device’s on-current (0.1 mA).

Graphical abstract