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<p>The impact of solvent choice and associated working parameters on the properties of ferroelectric (FE) polymer (PVDF-TrFE) thin films, synthesized through Langmuir–Blodgett (LB) methodology, is considered. Three different solvents, i.e., Dimethyl Sulfoxide (DMSO), Cyclopentanone (CP), and a binary solvent mixture of DMSO + Acetone (DMSO + A) were utilized for the dissolution of PVDF-TrFE polymer. The synthesized thin films were characterized using piezoresponse force microscopy (PFM), from which the FE attributes were inferred. It was observed that the FE film structure obtained using the DMSO + A system was optimal, with respect to film uniformity and roughness, and yielded enhanced FE characteristics. The influence of solvents for obtaining such optimal film properties was correlated through the Hansen solubility parameters. The results of this study yield insights into conditions related to ultra-thin-film materials synthesis for FE devices.</p> Graphical abstract <p></p>

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Investigating pressure and solvent effects in Langmuir–Blodgett deposited ferroelectric thin films

  • 期刊论文

  • 发表日期：

    2025年2月4日

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  • Pranjali Khajanji,
  • Shreyam Natani,
  • Prabhakar Bandaru

摘要

The impact of solvent choice and associated working parameters on the properties of ferroelectric (FE) polymer (PVDF-TrFE) thin films, synthesized through Langmuir–Blodgett (LB) methodology, is considered. Three different solvents, i.e., Dimethyl Sulfoxide (DMSO), Cyclopentanone (CP), and a binary solvent mixture of DMSO + Acetone (DMSO + A) were utilized for the dissolution of PVDF-TrFE polymer. The synthesized thin films were characterized using piezoresponse force microscopy (PFM), from which the FE attributes were inferred. It was observed that the FE film structure obtained using the DMSO + A system was optimal, with respect to film uniformity and roughness, and yielded enhanced FE characteristics. The influence of solvents for obtaining such optimal film properties was correlated through the Hansen solubility parameters. The results of this study yield insights into conditions related to ultra-thin-film materials synthesis for FE devices.

Graphical abstract