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<p>Spectroscopic techniques are used widely to detect and characterize impurities and native defects in semiconductors. Key experimental methods include infrared transmission, photoluminescence, deep-level transient spectroscopy, deep-level optical spectroscopy, electron paramagnetic resonance, optically detected magnetic resonance, and positron annihilation measurements. This review discusses these defect spectroscopies as applied to modern semiconductor materials, with an emphasis on novel phenomena, emerging methods, and technologically important systems.</p> Graphical abstract <p></p>

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Spectroscopy of point defects in semiconductors

  • 期刊论文

  • 发表日期：

    2026年5月7日

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  • Matthew D. McCluskey,
  • Michael A. Reshchikov,
  • Hemant Ghadi,
  • Joe F. McGlone,
  • Steven A. Ringel,
  • Patrick M. Lenahan,
  • Kai-Mei C. Fu,
  • Filip Tuomisto

摘要

Spectroscopic techniques are used widely to detect and characterize impurities and native defects in semiconductors. Key experimental methods include infrared transmission, photoluminescence, deep-level transient spectroscopy, deep-level optical spectroscopy, electron paramagnetic resonance, optically detected magnetic resonance, and positron annihilation measurements. This review discusses these defect spectroscopies as applied to modern semiconductor materials, with an emphasis on novel phenomena, emerging methods, and technologically important systems.

Graphical abstract