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Abstract <p>Thin films with wurtzite crystal structure feature some of the best compatibility with the major semiconductor platforms among ferroelectrics, as well as high remanent polarization, excellent stability, and scalability;&#xa0;making them very attractive for microelectronics applications ranging from memories to sensors and actuators. Their intrinsic functionality, which enables these applications directly links device performance to the underlying growth processes. This article gives an overview of the three main deposition methods for the material class (sputtering, molecular beam epitaxy, metal–organic chemical vapor deposition), their individual advantages as well as how they can contribute to solving the main challenges that remain to be overcome in order to bring wurtzite ferroelectrics to large-scale applications. Furthermore, it differentiates the growth of wurtzite ferroelectrics from that of more established thin-film ferroelectrics.</p> Graphical Abstract <p></p>

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Growth of wurtzite ferroelectrics

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年9月1日

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  • Simon Fichtner,
  • Masato Uehara,
  • Isabel Streicher,
  • Samuel Yang,
  • Jon-Paul Maria,
  • Zetian Mi,
  • Stefano Leone,
  • Hiroshi Funakubo

摘要

Abstract

Thin films with wurtzite crystal structure feature some of the best compatibility with the major semiconductor platforms among ferroelectrics, as well as high remanent polarization, excellent stability, and scalability; making them very attractive for microelectronics applications ranging from memories to sensors and actuators. Their intrinsic functionality, which enables these applications directly links device performance to the underlying growth processes. This article gives an overview of the three main deposition methods for the material class (sputtering, molecular beam epitaxy, metal–organic chemical vapor deposition), their individual advantages as well as how they can contribute to solving the main challenges that remain to be overcome in order to bring wurtzite ferroelectrics to large-scale applications. Furthermore, it differentiates the growth of wurtzite ferroelectrics from that of more established thin-film ferroelectrics.

Graphical Abstract