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<p>As communication rates continue to increase and wavelength-division multiplexing (WDM) becomes ubiquitous, the conventional fiber-optic O and C bands no longer suffice. The 2 <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(\upmu\)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>m wavelength region has emerged as a promising new window in silicon photonics to meet future high-capacity demands and support next-generation optical communication and sensing. Here, we present a high-speed, high-responsivity InGaAs/GaAsSb type-II superlattice (T2SL) photodetector heterogeneously integrated on silicon via micro-transfer printing (<InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(\upmu\)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>TP), achieving broadband operation from 0.8 to 2.5 <InlineEquation ID="IEq5"> <EquationSource Format="TEX">\(\upmu\)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>m. By introducing a cavity between backside Au reflector and low refractive index BCB, the broadband responsivity is significantly enhanced with a 57.9% increase at 2 <InlineEquation ID="IEq6"> <EquationSource Format="TEX">\(\upmu\)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>m overcoming the conventional trade-off between responsivity and bandwidth. The optimized device demonstrates responsivities of 0.85 A/W at 1.55 <InlineEquation ID="IEq7"> <EquationSource Format="TEX">\(\upmu\)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>m and 0.6 A/W at 2.0 <InlineEquation ID="IEq8"> <EquationSource Format="TEX">\(\upmu\)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>m, together with 3dB bandwidths of 17 GHz and 18.7 GHz, respectively, approaching the intrinsic carrier transit limit. A clear eye diagram at 50 Gbps further confirms the high-speed performance. These results establish a new benchmark in the responsivity–bandwidth trade-off for broadband photodetectors and demonstrate <InlineEquation ID="IEq9"> <EquationSource Format="TEX">\(\upmu\)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>TP as a versatile integration platform for future silicon photonic integrated circuits and optical systems.</p>

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High-speed and broadband \(\upmu\)TP-heterogeneously integrated InGaAs/GaAsSb photodetectors for next-generation optical interconnects

  • 期刊论文

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  • 发表日期：

    2026年4月29日

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  • Yan Liang,
  • Yuxuan Wang,
  • Faran Chang,
  • Guanyu Li,
  • Wenguang Zhou,
  • Xiangbin Su,
  • Xiaochen Li,
  • Dongwei Jiang,
  • Donghai Wu,
  • Guowei Wang,
  • Guang Qian,
  • Yingqiang Xu,
  • Zhichuan Niu,
  • Youdou Zheng,
  • Yi Shi

摘要

As communication rates continue to increase and wavelength-division multiplexing (WDM) becomes ubiquitous, the conventional fiber-optic O and C bands no longer suffice. The 2 \(\upmu\) μ m wavelength region has emerged as a promising new window in silicon photonics to meet future high-capacity demands and support next-generation optical communication and sensing. Here, we present a high-speed, high-responsivity InGaAs/GaAsSb type-II superlattice (T2SL) photodetector heterogeneously integrated on silicon via micro-transfer printing ( \(\upmu\) μ TP), achieving broadband operation from 0.8 to 2.5 \(\upmu\) μ m. By introducing a cavity between backside Au reflector and low refractive index BCB, the broadband responsivity is significantly enhanced with a 57.9% increase at 2 \(\upmu\) μ m overcoming the conventional trade-off between responsivity and bandwidth. The optimized device demonstrates responsivities of 0.85 A/W at 1.55 \(\upmu\) μ m and 0.6 A/W at 2.0 \(\upmu\) μ m, together with 3dB bandwidths of 17 GHz and 18.7 GHz, respectively, approaching the intrinsic carrier transit limit. A clear eye diagram at 50 Gbps further confirms the high-speed performance. These results establish a new benchmark in the responsivity–bandwidth trade-off for broadband photodetectors and demonstrate \(\upmu\) μ TP as a versatile integration platform for future silicon photonic integrated circuits and optical systems.