Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory
摘要
Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses generated by the absorption of femtosecond laser pulses at room ambient temperature. When a threshold temperature in the heat-based short-term memory of the device is exceeded, the output of the in-memory logic operations is transferred within the same device to a long-term memory, where it can be retrieved at macroscopic times. The long-term memory is based on magnetoresistive switching from a reference low-resistive uniform magnetic state to high-resistive metastable nanofragmented magnetic states. The in-memory heat-based logic operations and the conversion of the outputs into the electrically-readable long-term magnetoresistive memory were performed at sub-nanosecond time scales, making them compatible with the GHz frequencies of standard electronics. Finally, we demonstrate the possibility of rapidly resetting the long-term memory to the reference low-resistive state by heat pulses.