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<p>This study investigates the effects of alkaline-earth dopant inclusion on the optical and electrical properties of sputtered cesium iodide (CsI) thin films for potential radiation-sensing applications. CsI layers deposited on Si(100) substrates at sputtering powers of 30 W and 50 W were co-doped with Sr,Tl and characterized using GI-XRD, UV–Vis spectroscopy, Hall-effect measurements, and I–V analysis, complemented by computational modeling and α-particle response simulations. Structurally, Sr,Tl incorporation results in modest lattice relaxation of − 2% strain without symmetry degradation, indicating that residual strain remains dominated by growth conditions. Optical measurements reveal a dopant-related transition near 2.5&#xa0;eV and an intrinsic near-edge transition around 4.1–4.2&#xa0;eV, associated with defect-modified electronic states. Hall-effect measurements confirm p-type conductivity with a carrier density of 8.49 E + 09&#xa0;cm⁻<sup>3</sup>, mobility of 30.5 cm<sup>2</sup>&#xa0;V⁻<sup>1</sup>&#xa0;s⁻<sup>1</sup>, and resistivity of 5.74 E + 05 Ω·cm. The CsI:Sr,Tl/Si heterojunction exhibits stable rectifying I–V behavior (Vₒₙ = + 5.4&#xa0;V, V<sub>BR</sub> = − 5.4&#xa0;V) and internal electric fields on the order of 10<sup>4</sup>–10<sup>5</sup>&#xa0;V&#xa0;cm⁻<sup>1</sup>, while transient-response simulations indicate fast, drift-dominated charge collection with energy-proportional currents. These results demonstrate that Sr,Tl co-doping, combined with controlled thin-film growth, enables microstructural and defect regulation that supports electrically robust CsI-based heterojunction devices, reinforcing the potential of lead-free, wide-bandgap CsI thin films for radiation-detection applications.</p>

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Modification of optical and electrical properties in sputtered CsI films by dopant incorporation

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月17日

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  • Khemipa Sanklaa,
  • Phannee Saengkaew,
  • Sirasit Sreesai,
  • Rhett Simon Tabbada,
  • Tossaporn Lertvanithphol,
  • Prutthipong Tsuppayakorn-aek,
  • Md. Helal Miah,
  • Mayeen Uddin Khandaker,
  • Kittidhaj Dhanasiwawong,
  • Mati Horprathum,
  • Rawat Jaisutti,
  • Wasin Chevajarassakul

摘要

This study investigates the effects of alkaline-earth dopant inclusion on the optical and electrical properties of sputtered cesium iodide (CsI) thin films for potential radiation-sensing applications. CsI layers deposited on Si(100) substrates at sputtering powers of 30 W and 50 W were co-doped with Sr,Tl and characterized using GI-XRD, UV–Vis spectroscopy, Hall-effect measurements, and I–V analysis, complemented by computational modeling and α-particle response simulations. Structurally, Sr,Tl incorporation results in modest lattice relaxation of − 2% strain without symmetry degradation, indicating that residual strain remains dominated by growth conditions. Optical measurements reveal a dopant-related transition near 2.5 eV and an intrinsic near-edge transition around 4.1–4.2 eV, associated with defect-modified electronic states. Hall-effect measurements confirm p-type conductivity with a carrier density of 8.49 E + 09 cm⁻3, mobility of 30.5 cm2 V⁻1 s⁻1, and resistivity of 5.74 E + 05 Ω·cm. The CsI:Sr,Tl/Si heterojunction exhibits stable rectifying I–V behavior (Vₒₙ = + 5.4 V, VBR = − 5.4 V) and internal electric fields on the order of 104–105 V cm⁻1, while transient-response simulations indicate fast, drift-dominated charge collection with energy-proportional currents. These results demonstrate that Sr,Tl co-doping, combined with controlled thin-film growth, enables microstructural and defect regulation that supports electrically robust CsI-based heterojunction devices, reinforcing the potential of lead-free, wide-bandgap CsI thin films for radiation-detection applications.