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<p>This investigation introduces a novel method for the fabrication of ZnSe thin films on glass substrates through the spin coating technique which employs thiol-amine cosolvents. The thiol-amine co-solvent system efficiently dissolves several metal and metal chalcogenide precursors, facilitating cost-effective, and low-temperature solution-based deposition compatible with flexible substrates. The synthesized ZnSe thin films underwent air annealing at temperatures between 250 and 350 °C, thereby improving their structural and optical characteristics. The polycrystalline nature of ZnSe was elucidated via X-ray diffraction (XRD) analysis, while scanning electron microscopy (SEM) assured the rise of surface smoothness and uniformity with annealing temperature. Energy-dispersive spectroscopy (EDS) analysis indicated near-stoichiometric ZnSe composition, and Fourier-transform infrared (FTIR) spectroscopy identified Zn–Se stretching vibrations in the 960–1120&#xa0;cm<sup>−1</sup> range. The optical data demonstrated high transmittance with an optical bandgap of 3.32–3.85&#xa0;eV. Furthermore, optical data of ZnSe were embarked for computation of Ge-on-ZnSe waveguide with SiO<sub>2</sub> cladding for long-wave infrared (LWIR) light. The waveguide showed a remarkable power confinement factor (PCF) of ~ 0.99 with nearly 1&#xa0;dB/cm loss at a laser wavelength of 8&#xa0;μm. These outputs are highly optimistic for the fabrication of solution-processed ZnSe for LWIR photonic integration.</p>

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Synthesis of ZnSe thin films by solution-processed spin coating method for photonic integration applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年5月26日

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  • Tanzina Rahman,
  • Md. Alamin Hossain Pappu,
  • Bipanko Kumar Mondal,
  • Syeda Samiha Nushin,
  • Jaker Hossain

摘要

This investigation introduces a novel method for the fabrication of ZnSe thin films on glass substrates through the spin coating technique which employs thiol-amine cosolvents. The thiol-amine co-solvent system efficiently dissolves several metal and metal chalcogenide precursors, facilitating cost-effective, and low-temperature solution-based deposition compatible with flexible substrates. The synthesized ZnSe thin films underwent air annealing at temperatures between 250 and 350 °C, thereby improving their structural and optical characteristics. The polycrystalline nature of ZnSe was elucidated via X-ray diffraction (XRD) analysis, while scanning electron microscopy (SEM) assured the rise of surface smoothness and uniformity with annealing temperature. Energy-dispersive spectroscopy (EDS) analysis indicated near-stoichiometric ZnSe composition, and Fourier-transform infrared (FTIR) spectroscopy identified Zn–Se stretching vibrations in the 960–1120 cm−1 range. The optical data demonstrated high transmittance with an optical bandgap of 3.32–3.85 eV. Furthermore, optical data of ZnSe were embarked for computation of Ge-on-ZnSe waveguide with SiO2 cladding for long-wave infrared (LWIR) light. The waveguide showed a remarkable power confinement factor (PCF) of ~ 0.99 with nearly 1 dB/cm loss at a laser wavelength of 8 μm. These outputs are highly optimistic for the fabrication of solution-processed ZnSe for LWIR photonic integration.