Scholarlink

<p>In this manuscript, we report successful synthesis and investigation of structural, morphological, electrical, and optical properties of doped and undoped Sb<sub>2</sub>Se<sub>3</sub>. A significant enhancement in electrical and optical properties of Zn-doped Sb<sub>2</sub>Se<sub>3</sub> is observed. The temperature dependence of direct current (dc) conductivity has been investigated in thin films of Sb<sub>2</sub>Zn<sub>x</sub>Se<sub>3-x</sub> (where <i>x</i> = 0 and <i>x</i> = 0.25) in the temperature range of 290–490&#xa0;K to determine the conduction mechanism and examine the effects of doping. It shows that, in the temperature range (343–490&#xa0;K), conduction is primarily due to thermally activated tunneling of charge carriers through the band tails of localized states. In the lower temperature range 293–343&#xa0;K, conduction occurs via variable range hopping in the localized states near the fermi level. The decrease in the optical bandgap value as a result of Zn doping in Sb<sub>2</sub>Se<sub>3</sub> has been correlated with the variation in density of states, increased electron–phonon interaction and steepness parameter.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Temperature-dependent conduction and optical bandgap reduction in Zn-doped thermally evaporated Sb2Se3 thin film: a comprehensive investigation

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年11月4日

查看全文
  • Nargis Fatima Khatoon,
  • Zubair Aslam,
  • Mohd Shoab,
  • Javid Ali,
  • Mohammad Zulfequar

摘要

In this manuscript, we report successful synthesis and investigation of structural, morphological, electrical, and optical properties of doped and undoped Sb2Se3. A significant enhancement in electrical and optical properties of Zn-doped Sb2Se3 is observed. The temperature dependence of direct current (dc) conductivity has been investigated in thin films of Sb2ZnxSe3-x (where x = 0 and x = 0.25) in the temperature range of 290–490 K to determine the conduction mechanism and examine the effects of doping. It shows that, in the temperature range (343–490 K), conduction is primarily due to thermally activated tunneling of charge carriers through the band tails of localized states. In the lower temperature range 293–343 K, conduction occurs via variable range hopping in the localized states near the fermi level. The decrease in the optical bandgap value as a result of Zn doping in Sb2Se3 has been correlated with the variation in density of states, increased electron–phonon interaction and steepness parameter.