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<p>This study investigates the impact of high-energy proton irradiation (33 and 100&#xa0;MeV) on the radiation response and statistical uniformity of the breakdown field of Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub> based metal–insulator–metal capacitors. While macroscopic electrical characteristics—such as polarization hysteresis, dielectric constant, and leakage current—exhibit remarkable radiation stability across various crystalline phases, a distinct improvement is observed in the statistical distribution of the breakdown field (<i>E</i><sub><i>BD</i></sub>). Weibull distribution analysis reveals a consistent increase in the shape factor (β) following irradiation, indicating a "healing effect" that effectively narrows the variance of dielectric breakdown. This enhancement leads to a normalized yield improvement ranging from 3.0% to 14.8%. Our findings suggest that optimized high-energy proton treatment can effectively mitigate localized defects and suppress early-stage failures. These results provide a strategic pathway for enhancing the reliability and operational lifetime of high-k dielectrics in space-qualified and radiation-hardened electronics.</p> Graphical abstract <p></p>

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Healing effect of high-energy proton irradiation on the reliability of HfZrO based high-k dielectrics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月7日

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  • Chan Bin Lee,
  • Useok Choi,
  • Yongsu Lee,
  • Jun-Hyeok Choi,
  • Hyeon-Seok Shin,
  • Uigwan Shin,
  • Byeong Gwan Kim,
  • Jun Yeong Hong,
  • Jae Min Jo,
  • Jeong Min Park,
  • Hyeon Jun Hwang,
  • Chang Goo Kang,
  • Byoung Hun Lee

摘要

This study investigates the impact of high-energy proton irradiation (33 and 100 MeV) on the radiation response and statistical uniformity of the breakdown field of HfxZr1−xO2 based metal–insulator–metal capacitors. While macroscopic electrical characteristics—such as polarization hysteresis, dielectric constant, and leakage current—exhibit remarkable radiation stability across various crystalline phases, a distinct improvement is observed in the statistical distribution of the breakdown field (EBD). Weibull distribution analysis reveals a consistent increase in the shape factor (β) following irradiation, indicating a "healing effect" that effectively narrows the variance of dielectric breakdown. This enhancement leads to a normalized yield improvement ranging from 3.0% to 14.8%. Our findings suggest that optimized high-energy proton treatment can effectively mitigate localized defects and suppress early-stage failures. These results provide a strategic pathway for enhancing the reliability and operational lifetime of high-k dielectrics in space-qualified and radiation-hardened electronics.

Graphical abstract