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<p>Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector–1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. Here, we propose a highly coherent selector via in-depth investigation of the operation process of a fab-friendly As-SiO<sub>2</sub> selector unit. The structural and electrical characteristics of an As-embedded SiO<sub>2</sub> selector are analyzed, and the TS-on and -off operational mechanism is presented. Further, the critical control elements governing the selector operation are identified, including the electron charging into the oxygen vacancies in the SiO<sub>2</sub> matrix and energy band alignment between the As cluster and charged oxygen vacancies in SiO<sub>2</sub>. Consequently, practical control strategies for the TS behavior are proposed with a pulse scheme applicable to actual device operation. The proposed TS operational mechanism and analytical methodology can contribute to interpreting and integrating various memory/selector components, thereby advancing their operational and integrative research.</p> Graphical abstract <p></p>

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Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月4日

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  • Hye Rim Kim,
  • Tae Jun Seok,
  • Tae Jung Ha,
  • Jeong Hwan Song,
  • Kyun Seong Dae,
  • Sang Gil Lee,
  • Hyun Seung Choi,
  • Su Yong Park,
  • Byung Joon Choi,
  • Jae Hyuck Jang,
  • Soo Gil Kim,
  • Tae Joo Park

摘要

Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector–1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. Here, we propose a highly coherent selector via in-depth investigation of the operation process of a fab-friendly As-SiO2 selector unit. The structural and electrical characteristics of an As-embedded SiO2 selector are analyzed, and the TS-on and -off operational mechanism is presented. Further, the critical control elements governing the selector operation are identified, including the electron charging into the oxygen vacancies in the SiO2 matrix and energy band alignment between the As cluster and charged oxygen vacancies in SiO2. Consequently, practical control strategies for the TS behavior are proposed with a pulse scheme applicable to actual device operation. The proposed TS operational mechanism and analytical methodology can contribute to interpreting and integrating various memory/selector components, thereby advancing their operational and integrative research.

Graphical abstract