γ-GeSe is a newly identified polymorph among group-IV monochalcogenides, characterized by a distinctive interatomic bonding configuration. Despite its promising applications in electrical and thermal domains, the experimental verification of its mechanical and thermal properties remains unreported. Here, we experimentally characterize the in-plane Young’s modulus (E) and thermal conductivity ( \(\:\kappa\:\) ) of γ-GeSe. The mechanical vibrational modes of freestanding γ-GeSe flakes are measured using optical interferometry. Nano-indentation via atomic force microscopy is also conducted to induce mechanical deformation and to extract the E. Comparison with finite-element simulations reveals that the E is 97.3 \(\:\pm\:\) 7.5 GPa as determined by optical interferometry and 109.4 \(\:\pm\:\) 13.5 GPa as established through the nano-indentation method. Additionally, optothermal Raman spectroscopy reveals that γ-GeSe has a lattice thermal conductivity of 2.3 \(\:\pm\:\) 0.4 Wm−1K−1 and a total thermal conductivity of 7.5 \(\:\pm\:\) 0.4 Wm−1K−1 in the in-plane direction at room temperature. The notably high \(\:E/\kappa\:\) ratio in γ-GeSe, compared to other layered materials, underscores its distinctive structural and dynamic characteristics.
