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Peculiarities of Electron Transport through the Contact Regions between Semiconductor Quantum Wires with Different Cross Sections

  • D. V. Pozdnyakov,
  • A. V. Borzdov,
  • V. M. Borzdov

摘要

Abstract

In the present work, the peculiarities of electron transport upon the transition from quantum wires with smaller cross sections to quantum wires with larger cross sections are studied. The probabilities of electron transfer through corresponding contact regions of such quantum wires are calculated as functions of the charge-carrier kinetic energy and quantum-wire cross section ratio. The peculiarities of electron transfer through defect regions in quantum wires in the form of rectangular grooves and steps are also studied. The probabilities of electron transfer through the defect regions are calculated as functions of the electron kinetic energy and geometry and size of the defects. The probability density distributions of electron detection in different regions of the modeled structures are calculated.