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Abstract <p>The properties of Cu/NC/D/Ni memristive structures with a (CoFeB)<sub><i>x</i></sub>(LiNbO<sub>3</sub>)<sub>100–<i>x</i></sub> nanocomposite layer and a LiNbO<sub>3</sub> dielectric layer with a thicknesses of 230 and 20 nm, respectively, are studied. It is found that the resistive switching (RS) voltage of the structures decreases greatly from 2.4 to 0.5 V with increasing temperature from 270 to 380 K. The negative magnetoresistance (MR) and its noticeable influence on the voltage and current of RS, which reaches ~5% with a MR value of 1.8%, is revealed. The peculiarity of the RS structure effect is associated with the fairly efficient injection of spin-polarized electrons from the Ni electrode into the conduction band of the LiNbO<sub>3</sub> layer at positive bias voltages of the upper Cu electrode. In this case, the filling of deep energy-distributed traps in the LiNbO<sub>3</sub> layer, which is observed above a certain voltage applied to the structure, leads to a sharp increase in current and manifestation of the RS effect, depending on both temperature and magnetic field. Under these conditions the structures demonstrate spike-timing-dependent plasticity (STDP), which confirms the possibility of their use as synapses in the development of neuromorphic systems.</p>

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Features of the Resistive Switching of Memristors Based on a (CoFeB)x(LiNbO3)100–x Nanocomposite with a Ni Electrode: Influence of Temperature and Magnetic Field

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • S. N. Nikolaev,
  • A. I. Iliasov,
  • D. V. Ichetkin,
  • A. V. Emelyanov,
  • S. Yu. Shabanov,
  • A. V. Sitnikov,
  • V. A. Demin,
  • A. B. Granovsky,
  • V. V. Rylkov

摘要

Abstract

The properties of Cu/NC/D/Ni memristive structures with a (CoFeB)x(LiNbO3)100–x nanocomposite layer and a LiNbO3 dielectric layer with a thicknesses of 230 and 20 nm, respectively, are studied. It is found that the resistive switching (RS) voltage of the structures decreases greatly from 2.4 to 0.5 V with increasing temperature from 270 to 380 K. The negative magnetoresistance (MR) and its noticeable influence on the voltage and current of RS, which reaches ~5% with a MR value of 1.8%, is revealed. The peculiarity of the RS structure effect is associated with the fairly efficient injection of spin-polarized electrons from the Ni electrode into the conduction band of the LiNbO3 layer at positive bias voltages of the upper Cu electrode. In this case, the filling of deep energy-distributed traps in the LiNbO3 layer, which is observed above a certain voltage applied to the structure, leads to a sharp increase in current and manifestation of the RS effect, depending on both temperature and magnetic field. Under these conditions the structures demonstrate spike-timing-dependent plasticity (STDP), which confirms the possibility of their use as synapses in the development of neuromorphic systems.