Influence of Local Droplet Etching Modes on the Transformation of Nanoholes Formed by Focused Ion Beams on a GaAs(111) Surface

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发表日期：

2024年12月1日

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S. V. Balakirev,
N. E. Chernenko,
E. A. Lakhina,
D. V. Kirichenko,
N. A. Shandyba,
D. D. Dukhan,
M. M. Eremenko,
M. S. Solodovnik

摘要

Abstract

This paper presents for the first time the results of studying the influence of annealing modes of GaAs(111) substrates modified by focused ion beams on the transformation of the geometric characteristics of formed nanoholes due to the processes of local droplet etching. Experimental regularities of the influence of the number of ion beam passes, as well as the modes of substrate annealing (in an arsenic flux or its absence) on the shape, depth, and lateral size of nanoholes are established. The mechanism of transformation of the geometric characteristics of nanoholes formed at the points of influence of a focused ion beam during annealing under different modes leading to local droplet etching of the substrate at varying intensities is proposed.