Technology for Manufacturing TSV Structures for the Creation of Silicon Interposers Using Temporary-Bonding Technology

For the first time in Russia, we present a technology for temporary wafer bonding, which is used to form through holes in silicon (through-silica via (TSV) structures) with a high aspect ratio of depth to diameter (more than 10 to 1), as well as a method for transferring alignment marks from the front to the back side of a thin Si wafer, consisting in the use of a glass carrier plate, which allows for a sufficient amount of deflection of the assembly for lithography. The modernized operating parameters of Si-glass bonding, which consist in controlling the cooling rate of the plates and applying pressure to the plates during their cooling phase, ensure a reduction in the deflection of the resulting assembly by 75% before thinning and by 65% after thinning to a residual thickness of 125 μm while maintaining the mechanical integrity of the plates.