Resistive Switching in Nitride Memristors: Experiment

期刊论文
发表日期：

2024年2月1日

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I. S. Ezubchenko,
I. A. Chernykh,
A. A. Andreev,
O. A. Kondratev,
N. K. Chumakov,
V. G. Valeyev

摘要

Abstract

The features of resistive switching in memristors based on crystalline aluminum nitride with a wurtzite structure, grown under technology developed at the National Research Center “Kurchatov Institute” are studied.