X-Ray- and Synchrotron-Radiation Study of the Defect Structure of Epitaxial ZnO Films Grown by Magnetron Deposition on Al₂O₃ and LaMgAl₁₁O₁₉ Substrates with (0001) Orientation

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2024年2月1日

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V. A. Zhernova,
Yu. A. Volkovsky,
M. S. Folomeshkin,
A. Yu. Seregin,
P. A. Prosekov,
A. E. Muslimov,
A. V. Butashin,
A. M. Ismailov,
Yu. V. Grigoriev,
Yu. V. Pisarevsky,
V. M. Kanevsky,
A. E. Blagov,
M. V. Kovalchuk

摘要

Abstract

The results of studying the structural features of samples of zinc-oxide films obtained by magnetron deposition on chips of lanthanum-magnesium hexaaluminate and the surface of sapphire substrates with a gold buffer layer are presented. Analysis of the structure and morphology of the films is carried out using a set of methods, including high-resolution X-ray diffractometry, the method of constructing pole figures, and transmission electron microscopy. It is shown that when using cleavages of lanthanum-magnesium hexaaluminate, an epitaxial ZnO film is formed without signs of growth rotating domains. The use of a gold buffer layer during growth on sapphire substrates improves the crystalline quality of ZnO films, but does not completely suppress domain growth.

X-Ray- and Synchrotron-Radiation Study of the Defect Structure of Epitaxial ZnO Films Grown by Magnetron Deposition on Al2O3 and LaMgAl11O19 Substrates with (0001) Orientation

摘要

X-Ray- and Synchrotron-Radiation Study of the Defect Structure of Epitaxial ZnO Films Grown by Magnetron Deposition on Al₂O₃ and LaMgAl₁₁O₁₉ Substrates with (0001) Orientation