Chemical Vapor Deposition of Tungsten Borides
摘要
Abstract
This paper presents the results of experiments on the synthesis of tungsten boride (WB), as part of the W–C–B system by chemical vapor deposition from a vapor–gas mixture containing tungsten hexafluoride, hydrogen, and trimethylamine borane (TMAB), using argon as a carrier gas. The schematic diagram of the working unit is described, the materials used and the synthesis modes are presented. The feasibility of forming the WB and W2B5 phases via deposition using a tungsten fluoride precursor is demonstrated. Data on the phase composition and morphology of deposits obtained under various deposition conditions are presented, along with a proposed possible mechanism of phase formation during chemical deposition from the WF6–H2–TMAB gas mixture.