Abstract <p>The etching rates and characteristics of monocrystalline silicon in aqueous solutions containing hydrazine have been determined along the base plane with Miller index 〈100〉. Comparative experiments were conducted with solutions containing certain primary amines (triethanolamine and monoethanolamine). It has been shown that the mechanism of action of hydrazine is catalytic in nature. The morphology of the silicon surface after etching in hydrazine-containing compositions was investigated, demonstrating the possibility of controlling the roughness of the etched surface by using additives of surfactants.</p>

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Catalytic Etching of Silicon in Solutions Containing Hydrazine

  • D. N. Zubov,
  • S. A. Sokolov

摘要

Abstract

The etching rates and characteristics of monocrystalline silicon in aqueous solutions containing hydrazine have been determined along the base plane with Miller index 〈100〉. Comparative experiments were conducted with solutions containing certain primary amines (triethanolamine and monoethanolamine). It has been shown that the mechanism of action of hydrazine is catalytic in nature. The morphology of the silicon surface after etching in hydrazine-containing compositions was investigated, demonstrating the possibility of controlling the roughness of the etched surface by using additives of surfactants.