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Abstract <p>The results of study of the processes of formation of nanolayers of silicon, tantalum, and aluminum oxides obtained using molecular layering (atomic layer deposition) on the surface of metal matrices (tantalum and aluminum) are presented. The conditions of the layering mechanism of formation of nanostructures are determined. An assessment of their dielectric characteristics is carried out.</p>

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Formation and Dielectric Characteristics of Nanolayers in Metal–Dielectric–Metal Structures

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • Yu. K. Ezhovsky

摘要

Abstract

The results of study of the processes of formation of nanolayers of silicon, tantalum, and aluminum oxides obtained using molecular layering (atomic layer deposition) on the surface of metal matrices (tantalum and aluminum) are presented. The conditions of the layering mechanism of formation of nanostructures are determined. An assessment of their dielectric characteristics is carried out.