Irradiation of Monocrystalline Silicon with a High-Power Pulsed Beam of Carbon Ions and Protons

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发表日期：

2024年6月3日

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S. V. Simakov,
N.A. Vinogradova,
O. N. Nikitushkina,
S. B. Rumyantseva,
A. B. Mikhailova,
V. I. Tovtin,
E. E. Starostin,
M. V. Zhidkov,
A. E. Ligachev,
G. V. Potemkin,
G. E. Remnev,
S. K. Pavlov

摘要

Abstract

The surface of monocrystalline silicon irradiated with a high-power pulsed beam of carbon ions and protons is studied using optical and scanning electron microscopy. The surface is irradiated using a TEMP-2 accelerator in a vacuum of ~10^–3 Pa. The ion beam consists of 70% carbon ions (C⁺ + C⁺²) and 30% protons. The sample is irradiated with one pulse with a dose of 1.5 × 10¹³ ions/cm². Craters characterized by a hexagonal shape are obtained on the silicon surface. X-ray diffraction analysis shows the presence of carbon content inside the crater.