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Abstract <p>The present study introduces an advanced high-efficiency solar cell design that leverages nitrogenated holey graphene (C<sub>2</sub>N) as the absorber layer and a heavily doped p-CZT layer as an innovative back-surface field (BSF) material. Using the SCAPS-1D simulator, a previously reported cell structure (TCO/IGZO/C<sub>2</sub>N/back contact) with an efficiency of 18.22% was first reproduced and further enhanced by integrating Al and Pt as front and back contacts, respectively. A simple yet powerful numerical simulation in SCAPS enabled precise evaluation of how different physical parameters affect device performance. Building on these insights, a novel layered materials hetero-junction structure (Al/TCO/IGZO/C<sub>2</sub>N/CZT/Pt) was proposed. This device was proposed ans systematically optimized. This reveals that the CZT-BSF layer significantly boosts the performance—raising efficiency from 14.65 to 20.97%, while <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({{V}_{{{\text{OC}}}}}\)</EquationSource> <!--PhysChB2670015Alsalhi-m1--> </InlineEquation> increased from 1.33&#xa0;to 1.4044 V, <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({{J}_{{{\text{SC}}}}}\)</EquationSource> <!--PhysChB2670015Alsalhi-m2--> </InlineEquation>, from 17.61 to 23.68 mA/cm<sup>2</sup>, and fill factor <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(FF\)</EquationSource> <!--PhysChB2670015Alsalhi-m3--> </InlineEquation> from 84.50 to 89.08%. These findings highlight the strong potential of C<sub>2</sub>N-based structures for next-generation photovoltaic and optoelectronic technologies.</p>

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Design and Simulation of Nitrogen-Doped Graphene (C2N) Using SCAPS-1D Technology: Brightening the Future of Solar Energy with Vision 2030

  • 期刊论文

  • 发表日期：

    2026年5月1日

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  • A. Alsalhi,
  • A. Alharbi,
  • B. Almukhlifi,
  • B. Alngedan,
  • J. Alabdullateef,
  • J. Alnoudal,
  • R. Alharbi,
  • S. Alshdookhi,
  • S. Alfajih,
  • L. Alazmi,
  • S. Bouzgarrou

摘要

Abstract

The present study introduces an advanced high-efficiency solar cell design that leverages nitrogenated holey graphene (C2N) as the absorber layer and a heavily doped p-CZT layer as an innovative back-surface field (BSF) material. Using the SCAPS-1D simulator, a previously reported cell structure (TCO/IGZO/C2N/back contact) with an efficiency of 18.22% was first reproduced and further enhanced by integrating Al and Pt as front and back contacts, respectively. A simple yet powerful numerical simulation in SCAPS enabled precise evaluation of how different physical parameters affect device performance. Building on these insights, a novel layered materials hetero-junction structure (Al/TCO/IGZO/C2N/CZT/Pt) was proposed. This device was proposed ans systematically optimized. This reveals that the CZT-BSF layer significantly boosts the performance—raising efficiency from 14.65 to 20.97%, while \({{V}_{{{\text{OC}}}}}\) increased from 1.33 to 1.4044 V, \({{J}_{{{\text{SC}}}}}\) , from 17.61 to 23.68 mA/cm2, and fill factor \(FF\) from 84.50 to 89.08%. These findings highlight the strong potential of C2N-based structures for next-generation photovoltaic and optoelectronic technologies.