Scholarlink

Abstract <p>This work presents a novel combined method for the in situ analysis of electronic properties of SiC/Si heterojunctions with submicron resolution (30 nm), integrating Kelvin probe force microscopy (KPFM) and scanning tunneling spectroscopy (STS). For the first time, we have experimentally discovered a threshold activation effect of the space charge region (SCR) with a characteristic delay time of 2.3 ± 0.5 s and nonexponential work function relaxation (τ = 35 ± 2 s, β = 0.65 ± 0.05), indicating an energy distribution of interface states with a characteristic energy of 0.12 eV. A quantitative correlation between interface morphology and spatial distribution of the density of states (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({{D}_{{{\text{it}}}}}\)</EquationSource> <!--PhysPNLt2570217Dolgopolov-m1--> </InlineEquation>) has been established, showing a fivefold increase of <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({{D}_{{{\text{it}}}}}\)</EquationSource> <!--PhysPNLt2570217Dolgopolov-m2--> </InlineEquation> in dislocation areas (&gt;5 × 10<sup>12</sup> cm<sup>–2</sup> eV<sup>–1</sup>) compared to atomically smooth terraces. A physical model linking the <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\({{D}_{{{\text{it}}}}}(x)\)</EquationSource> <!--PhysPNLt2570217Dolgopolov-m3--> </InlineEquation> gradient with nonlinear band curving in the depletion region has been developed. Specific engineering solutions for radiation-hard converters are proposed: contact geometry optimization (30% reduction of fringe fields), <InlineEquation ID="IEq4"> <EquationSource Format="TEX">\({\text{A}}{{{\text{l}}}_{{\text{2}}}}{{{\text{O}}}_{{\text{3}}}}\)</EquationSource> <!--PhysPNLt2570217Dolgopolov-m4--> </InlineEquation> passivation (40% Schottky barrier reduction), and doping for relaxation time control. The results enable the targeted improvement of betavoltaic cell efficiency and the sensitivity of ionizing radiation detectors.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

In Situ Mapping of Space Charge Region Activation Dynamics in SiC/Si-Based Heterostructures by KPFM/STS: Role of Interface State Recharging

  • 期刊论文

  • 发表日期：

    2026年4月14日

查看全文
  • M. V. Dolgopolov,
  • N. A. Ivliev,
  • V. V. Radenko,
  • B. S. Radzhapov,
  • S. A. Radzhapov,
  • A. S. Chipura

摘要

Abstract

This work presents a novel combined method for the in situ analysis of electronic properties of SiC/Si heterojunctions with submicron resolution (30 nm), integrating Kelvin probe force microscopy (KPFM) and scanning tunneling spectroscopy (STS). For the first time, we have experimentally discovered a threshold activation effect of the space charge region (SCR) with a characteristic delay time of 2.3 ± 0.5 s and nonexponential work function relaxation (τ = 35 ± 2 s, β = 0.65 ± 0.05), indicating an energy distribution of interface states with a characteristic energy of 0.12 eV. A quantitative correlation between interface morphology and spatial distribution of the density of states ( \({{D}_{{{\text{it}}}}}\) ) has been established, showing a fivefold increase of \({{D}_{{{\text{it}}}}}\) in dislocation areas (>5 × 1012 cm–2 eV–1) compared to atomically smooth terraces. A physical model linking the \({{D}_{{{\text{it}}}}}(x)\) gradient with nonlinear band curving in the depletion region has been developed. Specific engineering solutions for radiation-hard converters are proposed: contact geometry optimization (30% reduction of fringe fields), \({\text{A}}{{{\text{l}}}_{{\text{2}}}}{{{\text{O}}}_{{\text{3}}}}\) passivation (40% Schottky barrier reduction), and doping for relaxation time control. The results enable the targeted improvement of betavoltaic cell efficiency and the sensitivity of ionizing radiation detectors.