Abstract <p>VEPP-5 injection complex located at BINP SB RAS delivers electron and positron beams through transportation channels to the VEPP-4M and VEPP-2000 colliders. It is necessary to change magnetic field vectors in dipole magnets to deliver particles which have different charges, such as positrons and electrons. Because of some physics effects in order to achieve precise adjustment of field, it is better to register not only current in magnet coils, but also the field in the transportation channel of the injection complex itself. The aim of the work is development of the device which would measure a magnetic field in the injection complex transportation channel with an accuracy better than <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({{10}^{{ - 3}}}\)</EquationSource> <!--PhysPNLt2570115Volkova-m1--> </InlineEquation>. Hall effect method is chosen. The tests on Hall sensors resistance to radiation are conducted. The device prototype for this experiment is created, assembled and tested. The change of Hall parameters due to time spent in radiation is registered. The experiment successfully demonstrated that the hall sensors operate in conditions of the injection complex radiation.</p>

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Distributed Hall Measuring System

  • O. A. Volkova,
  • D. P. Chernovskiy,
  • K. S. Shtro

摘要

Abstract

VEPP-5 injection complex located at BINP SB RAS delivers electron and positron beams through transportation channels to the VEPP-4M and VEPP-2000 colliders. It is necessary to change magnetic field vectors in dipole magnets to deliver particles which have different charges, such as positrons and electrons. Because of some physics effects in order to achieve precise adjustment of field, it is better to register not only current in magnet coils, but also the field in the transportation channel of the injection complex itself. The aim of the work is development of the device which would measure a magnetic field in the injection complex transportation channel with an accuracy better than \({{10}^{{ - 3}}}\) . Hall effect method is chosen. The tests on Hall sensors resistance to radiation are conducted. The device prototype for this experiment is created, assembled and tested. The change of Hall parameters due to time spent in radiation is registered. The experiment successfully demonstrated that the hall sensors operate in conditions of the injection complex radiation.