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Abstract <p>The melting of silicene and thin silicon films is studied using molecular dynamics methods. The melting temperature of thin films is shown to increase with increasing thickness and reach a saturation point corresponding to the melting temperature of bulk silicon at a film thickness of 16 atomic layers.</p>

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Melting of Silicene and Thin Silicon Films

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • Yu. D. Fomin,
  • E. N. Tsiok,
  • V. N. Ryzhov

摘要

Abstract

The melting of silicene and thin silicon films is studied using molecular dynamics methods. The melting temperature of thin films is shown to increase with increasing thickness and reach a saturation point corresponding to the melting temperature of bulk silicon at a film thickness of 16 atomic layers.