Abstract <p>The advancement of heterostructure materials is vital for improving supercapacitor performance. 2D graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) has drawn interest in energy storage owing to its layered structure, tunable bandgap, metal-free nature, high stability, low cost, and simple synthesis. Composite materials are also widely explored for their versatile properties. Herein, SnNb<sub>2</sub>O<sub>6</sub>/g-C<sub>3</sub>N<sub>4</sub> heterostructure was synthesized via hydrothermal method and characterized by XRD, Raman spectroscopy, FE-SEM, and TEM for detailed structural and morphological analysis. Electrochemical properties were analyzed using cyclic voltammetry, galvanostatic cycling, and impedance spectroscopy. The SnNb<sub>2</sub>O<sub>6</sub>/g-C<sub>3</sub>N<sub>4</sub> heterostructure exhibits an enhanced specific capacitance (217 F/g at 10 mV/s, 172 F/g at 0.5 A/g) than SnNb<sub>2</sub>O<sub>6</sub> alone, demonstrating its strong potential as an electrode material in supercapacitor devices.</p>

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Fabrication of SnNb2O6/g-C3N4 Heterostructure for Enhanced Supercapacitor Energy Storage

  • Smrutirekha Swain,
  • Ayonbala Baral,
  • Lakkoji Satish

摘要

Abstract

The advancement of heterostructure materials is vital for improving supercapacitor performance. 2D graphitic carbon nitride (g-C3N4) has drawn interest in energy storage owing to its layered structure, tunable bandgap, metal-free nature, high stability, low cost, and simple synthesis. Composite materials are also widely explored for their versatile properties. Herein, SnNb2O6/g-C3N4 heterostructure was synthesized via hydrothermal method and characterized by XRD, Raman spectroscopy, FE-SEM, and TEM for detailed structural and morphological analysis. Electrochemical properties were analyzed using cyclic voltammetry, galvanostatic cycling, and impedance spectroscopy. The SnNb2O6/g-C3N4 heterostructure exhibits an enhanced specific capacitance (217 F/g at 10 mV/s, 172 F/g at 0.5 A/g) than SnNb2O6 alone, demonstrating its strong potential as an electrode material in supercapacitor devices.