Abstract <p>The electron mobility due to scattering by acoustic phonons has been studied in a cylindrical GaN semiconductor nanowire embedded in a nonpolar medium. Taking into account the spin–orbit interaction, the dependences of electron mobility on the nanowire radius, the linear electron concentration, the Rashba spin–orbit coupling parameter, and the temperature have been obtained. It is demonstrated that the inclusion of spin–orbit interaction leads to an increase in electron mobility, with the rate of growth being particularly pronounced at low temperatures. A significant technological issue is examined: the impact of spin-orbit interaction on electron mobility in quasi-one-dimensional transport devices based on GaN nanowires at low temperatures, where scattering by acoustic phonons prevails.</p>