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Abstract <p>We present the results of the analysis of the possibility of detecting single photons of the extreme ultraviolet range using a multilayer thermoelectric sensor with an operating temperature of 4.2 K. The sensor with a surface area of 1 or 100 μm<sup>2</sup> consists of an absorber (W), a heat sink (Mo) and a dielectric substrate (Al<sub>2</sub>O<sub>3</sub>) with thicknesses of 40, 10 and 100 nm, respectively. The thickness of the thermoelectric layer (CeB<sub>6</sub>) was 5 and 10 nm. The equivalent noise power of the sensor is determined. To calculate the efficiency of detecting photons with energies of 22.5, 38, 39 and 44.7 eV, the processes of heat propagation in the considered sensor after absorption of photons in the center of the absorber surface are studied by computer simulation and the signal power is determined. Using the obtained results, the efficiency of the thermoelectric sensor of the proposed designs at an operating temperature of 4.2 K is assessed.</p>

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Thermoelectric Sensor for Registration of Single Photons in the Extreme Ultraviolet Region, Operating at the Boiling Point of Liquid Helium

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • A. A. Kuzanyan,
  • A. S. Kuzanyan,
  • L. G. Mheryan,
  • V. R. Nikoghosyan

摘要

Abstract

We present the results of the analysis of the possibility of detecting single photons of the extreme ultraviolet range using a multilayer thermoelectric sensor with an operating temperature of 4.2 K. The sensor with a surface area of 1 or 100 μm2 consists of an absorber (W), a heat sink (Mo) and a dielectric substrate (Al2O3) with thicknesses of 40, 10 and 100 nm, respectively. The thickness of the thermoelectric layer (CeB6) was 5 and 10 nm. The equivalent noise power of the sensor is determined. To calculate the efficiency of detecting photons with energies of 22.5, 38, 39 and 44.7 eV, the processes of heat propagation in the considered sensor after absorption of photons in the center of the absorber surface are studied by computer simulation and the signal power is determined. Using the obtained results, the efficiency of the thermoelectric sensor of the proposed designs at an operating temperature of 4.2 K is assessed.