Scholarlink

Abstract <p>We present the results of angular reflection analysis of black silicon (b-Si) layers formed by reactive ion etching. Calculations using the transfer matrix method and experimental measurements confirm the excellent antireflective properties of b-Si at light incidence angles of up to 60°. This ensures the stability of the short-circuit current in solar cells across a wide angular range, which is particularly important for the efficient operation of stationary photovoltaic stations during daytime and under cloudy conditions.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Modeling and Experimental Study of Black Silicon Angular Reflection

  • 期刊论文

  • 发表日期：

    2025年3月1日

查看全文
  • G. Y. Ayvazyan,
  • M. V. Katkov,
  • L. M. Lakhoyan

摘要

Abstract

We present the results of angular reflection analysis of black silicon (b-Si) layers formed by reactive ion etching. Calculations using the transfer matrix method and experimental measurements confirm the excellent antireflective properties of b-Si at light incidence angles of up to 60°. This ensures the stability of the short-circuit current in solar cells across a wide angular range, which is particularly important for the efficient operation of stationary photovoltaic stations during daytime and under cloudy conditions.