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Structural, Electrophysical, and Optical Characteristics of ZnO/Ag/Fe Thin Films of n- and p-Type Conductivity, Obtained by DC-Magnetron Method at Room Temperature

  • E. R. Arakelova,
  • S. L. Grigoryan,
  • S. G. Aghbalyan,
  • A. B. Mirzoian,
  • L. M. Savchenko,
  • A. M. Khachatryan,
  • A. S. Tsokolakyan

摘要

Abstract

Doped (Ag + Fe) zinc targets were obtained: Zn/Ag/Fe (Zn96, Ag2, Fe 2%; Zn94, Ag2, Fe 4%; and Zn90, Ag2, Fe 8%). ZnO/Ag/Fe films with n- and p- type conductivity were obtained on glass substrates at room temperature using the method of DC-magnetron sputtering of Zn/Ag/Fe targets in a gas mixture of Ar : O2, in a vacuum of about 0.666 Pa. The structural, electrophysical, optical, and morphological characteristics of the obtained films were studied. The research was conducted using X-ray diffraction (XRD), atomic force microscopy, UV/VIS spectroscopy, and Hall measurements. The X-ray diffraction patterns of the ZnO/Ag/Fe films with n- and p-type conductivity showed characteristic reflections of interplanar distances on glass substrates along the crystallographic directions 100, 002, and 101. The transmittance of these films is about 85–95% in the wavelength range of 400–930 nm. The ZnO/Ag/Fe films with p-type conductivity have a concentration of free carriers on the order of 1018 cm–3. The ZnO/Ag/Fe films obtained at room temperature of the substrate can be used in the development of functional optoelectronic devices.