Reflective Properties of Black Silicon in a Wide Spectral Range
摘要
Abstract
The structural and reflective properties (total reflectance and scattering) of black silicon layers formed by reactive ion etching have been studied. Reflectance spectra were determined in the visible, near-infrared, and near-ultraviolet wavelength ranges. The influence of etching duration on the optical behavior of black silicon layers is studied and the possibilities of their use in solar cells and photodetectors are discussed.