Wettability of Black Silicon Layers Formed by Different Methods
摘要
Abstract
The wettability of black silicon (b-Si) layers formed by reactive ion etching, metal-assisted chemical etching, and laser-induced etching has been studied. The wetting contact angles of the prepared samples with deionized water, glycerol, diiodomethane, and ethylene glycol were determined. It has been shown that the silicon oxide surface film and the enlargement area factor of b-Si layers have a significant influence on their wettability, varying from hydrophilic to hydrophobic properties.