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Abstract <p>The modeling of deformation of 50.8 mm diameter InSb wafers caused by single-sided lapping and polishing is investigated. Predicting wafer deflection has a positive impact on the development of the process scheme and allows for adjustment of process conditions to achieve the required BOW and WARP parameters of the wafer to meet the requirements of molecular beam epitaxy. It is shown that processing of InSb wafers taking into account the proposed model allows achieving the required geometric parameters with an accuracy of up to 1 μm.</p>

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Modeling the Deformation of a 50.8 mm Diameter InSb Wafer during Processing Using Single-Sided Lapping with a Free Abrasive

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • V. A. Ulkarov,
  • A. A. Trofimov,
  • N. I. Yakovleva,
  • O. S. Pavlova,
  • I. V. Novikov,
  • N. A. Sarkisov,
  • V. O. Kuzin

摘要

Abstract

The modeling of deformation of 50.8 mm diameter InSb wafers caused by single-sided lapping and polishing is investigated. Predicting wafer deflection has a positive impact on the development of the process scheme and allows for adjustment of process conditions to achieve the required BOW and WARP parameters of the wafer to meet the requirements of molecular beam epitaxy. It is shown that processing of InSb wafers taking into account the proposed model allows achieving the required geometric parameters with an accuracy of up to 1 μm.