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Abstract <p>The study of methods for creating mid-wave IR photosensors based on colloidal quantum dots (CQDs) for the creation of low-cost photodetector arrays is one of the most pressing problems for modern photosensos. The synthesis of HgTe CQDs was carried out, photoresistors were manufactured, and photosensor characteristics were studied. It has been experimentally shown that photoresistors manufactured with synthesized HgTe CQDs have sensitivity in the short-wave and mid-wave IR range at room temperature.</p>

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SWIR and MWIR Room Temperature Sensitivity of Photoresistors Based on HgTe Colloidal Quantum Dots

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • V. S. Popov,
  • T. Milenkovich,
  • K. T. Khakimov,
  • T. V. Koroleva,
  • A. D. Deomidov,
  • R. V. Davletshin,
  • K. A. Hamidullin,
  • O. A. Saptsova,
  • V. O. Yakovlev,
  • I. A. Shuklov,
  • A. A. Koronnov,
  • A. V. Egorov,
  • V. P. Ponomarenko

摘要

Abstract

The study of methods for creating mid-wave IR photosensors based on colloidal quantum dots (CQDs) for the creation of low-cost photodetector arrays is one of the most pressing problems for modern photosensos. The synthesis of HgTe CQDs was carried out, photoresistors were manufactured, and photosensor characteristics were studied. It has been experimentally shown that photoresistors manufactured with synthesized HgTe CQDs have sensitivity in the short-wave and mid-wave IR range at room temperature.