Scholarlink

Abstract <p>The results of investigations of metal‒insulator‒semiconductor structures based on an <i>n</i>-HgCdTe <i>n</i>B<i>n</i> structure with a superlattice in the barrier region are reported. The admittance spectroscopy study, which allows determination of a variety of properties of semiconductor heterostructures, has been carried out in a wide temperature range. The frequency and voltage dependences of the admittance and the time dependences of the relaxation of the electric capacitance under a pulsed bias have been obtained. The temperature dependence of the majority carrier concentration has been established. Using the temperature dependences of the longitudinal resistance of the epitaxial film volume and the majority carrier concentration, the activation energies have been found. The effect of IR illumination on different characteristics of the structure has been analyzed. It is shown that constant IR illumination changes the capacitance level in both the inversion and enrichment modes.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Characteristics of MIS Structures Based on HgCdTe with a Superlattice in the Barrier Region

  • 期刊论文

  • 发表日期：

    2025年2月1日

查看全文
  • A. V. Voitsekhovskii,
  • S. M. Dzyadukh,
  • D. I. Gorn,
  • S. A. Dvoretskii,
  • N. N. Mikhailov,
  • G. Yu. Sidorov,
  • M. V. Yakushev

摘要

Abstract

The results of investigations of metal‒insulator‒semiconductor structures based on an n-HgCdTe nBn structure with a superlattice in the barrier region are reported. The admittance spectroscopy study, which allows determination of a variety of properties of semiconductor heterostructures, has been carried out in a wide temperature range. The frequency and voltage dependences of the admittance and the time dependences of the relaxation of the electric capacitance under a pulsed bias have been obtained. The temperature dependence of the majority carrier concentration has been established. Using the temperature dependences of the longitudinal resistance of the epitaxial film volume and the majority carrier concentration, the activation energies have been found. The effect of IR illumination on different characteristics of the structure has been analyzed. It is shown that constant IR illumination changes the capacitance level in both the inversion and enrichment modes.