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Abstract <p>The admittance characteristics of a metal‒insulator‒semiconductor structure with an <i>n</i>B<i>n</i> semiconductor structure based on the MBE Hg<sub>1&#xa0;‒&#xa0;<i>x</i></sub>Cd<sub><i>x</i></sub>Te epitaxial layers with a superlattice in the barrier region have been investigated. The temperature dependences of the majority carrier concentration and the product of the differential resistance of the space charge region and the structure area have been plotted. The parameters of the Al<sub>2</sub>O<sub>3</sub>/Hg<sub>1&#xa0;‒&#xa0;<i>x</i></sub>Cd<sub><i>x</i></sub>Te interface, including the density and characteristic time of recharging of surface states, have been determined. It has been found that the temperature dependence of the differential conductivity of the space charge region contains two groups of maxima, the positions of which have been used to determine the carrier activation energies, one of which corresponding to the contact layer band gap.</p>

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Determination of the Electrical Properties of the HgCdTe nB(SL)n-Based MIS Structure in a Wide Temperature Range

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • A. V. Voitsekhovskii,
  • S. M. Dzyadukh,
  • D. I. Gorn,
  • S. A. Dvoretskii,
  • N. N. Mikhailov,
  • G. Yu. Sidorov,
  • M. V. Yakushev

摘要

Abstract

The admittance characteristics of a metal‒insulator‒semiconductor structure with an nBn semiconductor structure based on the MBE Hg1 ‒ xCdxTe epitaxial layers with a superlattice in the barrier region have been investigated. The temperature dependences of the majority carrier concentration and the product of the differential resistance of the space charge region and the structure area have been plotted. The parameters of the Al2O3/Hg1 ‒ xCdxTe interface, including the density and characteristic time of recharging of surface states, have been determined. It has been found that the temperature dependence of the differential conductivity of the space charge region contains two groups of maxima, the positions of which have been used to determine the carrier activation energies, one of which corresponding to the contact layer band gap.